Microwave ECR Plasma Reactive Ion

Integrating Chinese Technology with American Ideals

Microwave ECR Plasma Reactive Ion
State-of-the-art technology for microprocessor etching

Introduction

The plasma etchor is an indispensable apparatus in the manufacture of microelectronic devices.As device dimensions continue to shrink, electron cyclotron resonance (ECR) plasma etching technology for the fabrication of integrated circuits with submicron and deep-submicron has shown many advantages.

The disadvantage is that commercial ECR etchors are complex and expensive.

Our Technology

Our design adopts a special coil magnetic field configuration and plasma confinement method to achieve a high etching rate and large area uniformity.Our invention features high etch rate, great uniformity, simple structure, and high quality.

Features of the Technology

Features of Our Invention:

High etch rate (for Poly-Si, it is 0.5 mm/min)

Great uniformity (greater than 99% within a four inch wafer)

Simple Structure

High quality

This Technology is Available for Transfer

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